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Results of design and fabrication of a dual-band anti-reflection coating on a gallium  phosphide (GaP), zinc selenide (ZnSe) and zinc sulfide (ZnS) substrates are presented. A  multilayer stack structure of antireflection coatings made of zinc sulfide and yttrium  fluoride (YF3) was theoretically designed for optical bands between 0.8 and 0.9 μm and  between 9.5 and 10.5 μm. This stack was designed as efficient for these materials (GaP,  ZnS, ZnSe) together. Multilayer stack structure was deposited using thermal evaporation  method. Theoretically predicted transmittance spectra were compared with transmitted  spectra measured on coated substrates. Efficiency of anti-reflection coating is estimated  and discrepancies are analyzed and discussed

Design and fabrication of anti-reflection coating on Gallium Phosphide, Zinc Selenide and Zinc Sulfide substrates for visible and infrared application