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Understanding the physical and chemical mechanisms occurring during theforming process and operation of an organic resistive memory device is a majorissue for better performances. Various mechanisms were suggested in verticallystacked memory structures, but the analysis remains indirect and needsdestructive characterization (e.g. cross-section to access the organic layerssandwiched between electrodes). Here, we report a study on a planar, monolayerthick, hybrid nanoparticle/molecule device (10 nm gold nanoparticles embeddedin an electro-generated poly(2-thienyl-3,4-(ethylenedioxy)thiophene) layer),combining, in situ, on the same device, physical (scanning electron microscope,physico-chemical (thermogravimetry and mass spectroscopy, Raman spectroscopy)and electrical (temperature dependent current-voltage) characterizations. Wedemonstrate that the forming process causes an increase in the gold particlesize, almost 4 times larger than the starting nanoparticles, and that theorganic layer undergoes a significant chemical rearrangement from a sp3 to sp2amorphous carbon material. Temperature dependent electrical characterizationsof this nonvolatile memory confirm that the charge transport mechanism in thedevice is consistent with a trap-filled space charge limited current in the offstate, the sp2 amorphous carbon material containing many electrically activedefects.

nanoscale advances

Physical mechanisms involved in the formation and operation of memory  devices based on a monolayer of gold nanoparticles-polythiophene hybrid  materials