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We combine infrared absorption and Raman scattering spectroscopies to explorethe properties of the heavy transition metal dichalcogenide 1T-HfS$_2$. Weemploy the LO-TO splitting of the $E_u$ vibrational mode along with areevaluation of mode mass, unit cell volume, and dielectric constant to revealthe Born effective charge. We find $Z^*_{\rm{B}}$ = 5.3$e$, in excellentagreement with complementary first principles calculations. In addition toresolving controversy over the nature of chemical bonding in this system, wedecompose Born charge into polarizability and local charge. We find $\alpha$ =5.07 \AA$^3$ and $Z^{*}$ = 5.2$e$, respectively. Polar displacement-inducedcharge transfer from sulfur $p$ to hafnium $d$ is responsible for the enhancedBorn charge compared to the nominal 4+ in hafnium. 1T-HfS$_2$ is thus an ioniccrystal with strong and dynamic covalent effects. Taken together, our workplaces the vibrational properties of 1T-HfS$_2$ on a firm foundation and opensthe door to understanding the properties of tubes and sheets.

Chemical bonding and Born charge in 1T-HfS$_2$