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Patterning graphene into various mesoscopic devices such as nanoribbons,quantum dots, etc. by lithographic techniques has enabled the guiding andmanipulation of graphene's Dirac-type charge carriers. Graphene, withwell-defined strain patterns, holds promise of similarly rich physics whileavoiding the problems created by the hard to control edge configuration oflithographically prepared devices. To engineer the properties of graphene viamechanical deformation, versatile new techniques are needed to pattern strainprofiles in a controlled manner. Here we present a process by which strain canbe created in substrate supported graphene layers. Our atomic forcemicroscope-based technique opens up new possibilities in tailoring theproperties of graphene using mechanical strain.

Preparing local strain patterns in graphene by atomic force microscope based indentation