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Understanding ultrafast coherent electron dynamics is necessary forapplication of a single-electron source to metrological standards, quantuminformation processing, including electron quantum optics, and quantum sensing.While the dynamics of an electron emitted from the source has been extensivelystudied, there is as yet no study of the dynamics inside the source. This isbecause the speed of the internal dynamics is typically higher than 100 GHz,beyond state-of-the-art experimental bandwidth. Here, we theoretically andexperimentally demonstrate that the internal dynamics in a siliconsingleelectron source comprising a dynamic quantum dot can be detected,utilising a resonant level with which the dynamics is read out asgate-dependent current oscillations. Our experimental observation andsimulation with realistic parameters show that an electron wave packetspatially oscillates quantum-coherently at $\sim$ 200 GHz inside the source.Our results will lead to a protocol for detecting such fast dynamics in acavity and offer a means of engineering electron wave packets. This could allowhigh-accuracy current sources, high-resolution and high-speedelectromagnetic-field sensing, and high-fidelity initialisation of flyingqubits.

Picosecond coherent electron motion in a silicon single-electron source