English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Silicon spin qubits form one of the leading platforms for quantumcomputation. As with any qubit implementation, a crucial requirement is theability to measure individual quantum states rapidly and with high fidelity. Asthe signal from a single electron spin is minute, different spin states areconverted to different charge states. Charge detection so far mostly relied onexternal electrometers, which hinders scaling to two-dimensional spin qubitarrays. As an alternative, gate-based dispersive read-out based on off-chiplumped element resonators were introduced, but here integration times of 0.2 to2 ms were required to achieve single-shot read-out. Here we connect an on-chipsuperconducting resonant circuit to two of the gates that confine electrons ina double quantum dot. Measurement of the power transmitted through a feedlinecoupled to the resonator probes the charge susceptibility, distinguishingwhether or not an electron can oscillate between the dots in response to theprobe power. With this approach, we achieve a signal-to-noise ratio (SNR) ofabout six within an integration time of only 1 $\mu$s. Using Pauli's exclusionprinciple for spin-to-charge conversion, we demonstrate single-shot read-out ofa two-electron spin state with an average fidelity of $>$98% in 6 $\mu$s. Thisresult may form the basis of frequency multiplexed read-out in dense spin qubitsystems without external electrometers, therefore simplifying the systemarchitecture.

Rapid high-fidelity gate-based spin read-out in silicon