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The ability to gate-induce superconductivity by electrostatic chargeaccumulation is a recent breakthrough in physics and nano-electronics. With theexception of LaAlO$_3$/SrTiO$_3$ interfaces, experiments on gate-inducedsuperconductors have been largely confined to resistance measurements, whichprovide very limited information about the superconducting state. Here, weexplore gate-induced superconductivity in MoS$_2$ by performing tunnelingspectroscopy to determine the energy-dependent density of states (DOS) fordifferent levels of electron density $\textit{n}$. In the superconductingstate, the DOS is strongly suppressed at energy smaller than the gap, \Delta,which is maximum (\Delta ~ 2 meV) for $\textit{n}$ of ~ 10$^{14}$ cm$^{-2}$ anddecreases monotonously for larger $\textit{n}$. A perpendicular magnetic field$\textit{B}$ generates states at $E<\Delta$ that fill the gap, but a 20% DOSsuppression of superconducting origin unexpectedly persists much above thetransport critical field. Conversely, an in-plane field up to 10 T leaves theDOS entirely unchanged. Our measurements exclude that the superconducting statein MoS$_2$ is fully gapped and reveal the presence of a DOS that vanisheslinearly with energy, the explanation of which requires going beyond aconventional, purely phonon-driven Bardeen-Cooper-Schrieffer mechanism.

Tunneling spectroscopy of gate-induced superconductivity in MoS$_2$