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Manipulating valley-dependent Berry phase effects provides remarkableopportunities for both fundamental research and practical applications. Here,by referring to effective model analysis, we propose a general scheme forrealizing topological magneto-valley phase transitions. More importantly, byusing valley-half-semiconducting VSi2N4 as an outstanding example, weinvestigate sign change of valley-dependent Berry phase effects which drive thechange-in-sign valley anomalous transport characteristics via external meanssuch as biaxial strain, electric field, and correlation effects. As a result,this gives rise to quantized versions of valley anomalous transport phenomena.Our findings not only uncover a general framework to control valley degree offreedom, but also motivate further research in the direction of multifunctionalquantum devices in valleytronics and spintronics.

Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors