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The seamless integration of III-V nanostructures on silicon is along-standing goal and an important step towards integrated optical links. Inthe present work, we demonstrate scaled and waveguide coupled III-V photodiodesmonolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-nstructure. The waveguide coupled devices show a dark current down to 0.048A/cm2 at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplerscentered around 1320 nm, we observed a cutoff frequency f3dB exceeding 70 GHzand data reception at 50 GBd with OOK and 4PAM. When operated in forward biasas light emitting diode, the devices emit light centered at 1550 nm.Furthermore, we also investigate the self-heating of the devices using scanningthermal microscopy and find a temperature increase of only ~15 K during thedevice operation as emitter, in accordance with thermal simulation results.

Waveguide coupled III-V photodiodes monolithically integrated on Si