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The broken inversion symmetry and time-reversal symmetry along with the large spin–orbit interactions in monolayer MoS 2  make it an ideal candidate for novel valleytronic applications. However, the realization of efficient spin-valley-controlled devices demands the integration of perpendicular magnetic anisotropy (PMA) electrodes with negligible Schottky barriers. Here, as the first demonstration, we fabricated a monolayer MoS 2  field-effect transistor with PMA electrodes: Pt/[Co/Pt] 3  and [Co/Pt] 2 . The  I – V  curves of PMA/MoS 2  contacts show symmetric and linear behavior reflecting Ohmic nature. The flat-band Schottky barrier heights (SBHs) extracted using the temperature and gate voltage dependence of the  I – V  curves were found to be 10.2 and 9.6 meV. The observed SBHs are record low values reported thus far for any metal/monolayer MoS 2  contact. High-quality PMA electrodes with almost zero SBH play a paramount role in the future development of novel spintronic/valleytronic devices; hence, our results can open a new route toward the realization of novel technological devices employing two-dimensional materials.

Approaching barrier-free contacts to monolayer MoS2 employing [Co/Pt] multilayer electrodes