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Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band  k·p  method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of quantum dot orbitals” method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In 1− x  Ga  x   As  y  Sb 1− y  /GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.

Modeling electronic and optical properties of III–V quantum dots—selected recent developments