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We conducted a thorough investigation into the temperature dependence of themetallic-like bands of Si(553)-Au using angular-resolved photoemissionspectroscopy (ARPES). Our study addresses the challenges posed by theshort-term stability of the surface and photo-voltage effects, which weovercame to extract changes in the band-filling and Fermi-velocity. Ourfindings shed light on the low-temperature phase of the step edge inSi(553)-Au, which has been a topic of ongoing debate regarding its structuralor electronic nature. Through comparison with theoretical predictions of astructural-related low-temperature to high-temperature phase transition, wediscovered that the band-filling and Fermi-velocity do not change accordingly,thereby ruling out this scenario. Our study contributes to a betterunderstanding of this material system and provides an important reference forfuture research.

Temperature dependent ARPES of the metallic-like bands in Si(553)-Au