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The negatively charged Nitrogen-Vacancy (NV-) center in diamond is one of themost versatile and robust quantum sensors suitable for quantum technologies,including magnetic field and temperature sensors. For precision sensingapplications, densely packed NV- centers within a small volume are preferabledue to benefiting from 1/N^1/2 sensitivity enhancement (N is the number ofsensing NV centers) and efficient excitation of NV centers. However, methodsfor quickly and efficiently forming high concentrations of NV- centers are indevelopment stage. We report an efficient, low-cost method for creatinghigh-density NV- centers production from a relatively low nitrogenconcentration based on high-energy photons from Ar+ plasma. This study was doneon type-IIa, single crystal, CVD-grown diamond substrates with an as-grownnitrogen concentration of 1 ppm. We estimate an NV- density of ~ 0.57 ppm (57%)distributed homogeneously over 200 um deep from the diamond surface facing theplasma source based on optically detected magnetic resonance and fluorescenceconfocal microscopy measurements. The created NV-s have a spin-latticerelaxation time (T1) of 5 ms and a spin-spin coherence time (T2) of 4 us. Wemeasure a DC magnetic field sensitivity of ~ 104 nT Hz^-1/2, an AC magneticfield sensitivity of ~ 0.12 pT Hz^-1/2, and demonstrate real-time magneticfield sensing at a rate over 10 mT s-1 using an active sample volume of 0.2um3.

An efficient and low-cost method to create high-density nitrogen-vacancy centers in CVD diamond for sensing applications