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The influence of indium percentage on dynamical characteristics of InxGa1-xAs/GaAs(001) quantum dot lasers (QDLs) is investigated. Energy levels of self-organized truncated-cone-shape QDs are calculated by means of the eight-band k.p model and their dependence to indium percentage is surveyed. Then, by presenting a four-level model and numerical solution of the resulting rate equations, laser properties are determined. Our results show that inclusion of more indium gives rise in the reduced bandgap and electron–hole recombination energy. Moreover, lasing for both Ground State (GS) and Excited States (ES) sounds to be sensitive to indium percentage. It is shown that rise of indium percentage at fixed injected current results in the increased ES turn-on delay and GS photon number and 3 dB modulation bandwidth, and decreased ES photon number, GS turn-on delay, amplitude of relaxation oscillations, output power, and ES 3 dB modulation bandwidth; but has no effect on threshold current and laser gain. At last, we find an optimized cavity length which was likely to be independent from indium percentage.

Influence of Indium-Percentage Variation on Dynamical Characteristics of InxGa1-xAs/GaAs(001) Quantum Dot Lasers