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HighlightsPhase-change memory based on Ta-doped antimony telluride (Sb 2 Te) exhibits both high-speed characteristics and excellent high-temperature characteristics, allowing improved performance and new applications.    The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms enhance the robustness of the amorphous structure, ensuring good thermal stability.    Through the three-dimensional limit, the formation of small grains reduces the power consumption and improves the long-term endurance.Electronic supplementary material  The online version of this article (10.1007/s40820-020-00557-4) contains supplementary material, which is available to authorized users.

Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics