English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

VO 2  thin films were grown on silicon substrates using Al 2 O 3  thin films as the buffer layers. Compared with direct deposition on silicon, VO 2  thin films deposited on Al 2 O 3  buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO 2  thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al 2 O 3 /VO 2 /Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The  C – V  measurement result indicates that the phase transformation of VO 2  thin films can be induced by an electrical field.Electronic supplementary material  The online version of this article (doi:10.1007/s40820-017-0132-x) contains supplementary material, which is available to authorized users.

Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films