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We studied silicon, carbon, and SiC  x  nanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy systems. Nanodots obtained from fixed electron beam irradiation followed a universal size versus beam dose trend, with precursor concentrations from pure SiCl 4 to 0 % SiCl 4 in CH 2 Cl 2 , and electron beam intensity ranges of two orders of magnitude, showing good controllability of the deposition. Secondary electrons contributed to the determination of the lateral sizes of the nanostructures, while the primary beam appeared to have an effect in reducing the vertical growth rate. These results can be used to generate donut-shaped nanostructures. Using a scanning electron beam, line structures with both branched and unbranched morphologies were also obtained. The liquid-phase electron-beam-induced deposition technology is shown to be an effective tool for advanced nanostructured material generation.

Effects Associated with Nanostructure Fabrication Using In Situ Liquid Cell TEM Technology