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We have studied the behavior of electronic energy spin-splitting of InGaAs–InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 4 \(\times \) 4 version of the transfer matrix approach that consider contributions from abrupt interfaces and external fields when tunneling through central barrier exists. We have included Landé g-factor dependence on the external applied field. Also, we have calculated electron density of states and photoluminescence excitation. Variations of electron spin-splitting energy lead to marked peculiarities in the density of states. Since the density of states is directly related to photoluminescence excitation, these peculiarities are observable by this technique.

Abrupt barrier contribution to electron spin splitting in asymmetric coupled double quantum wells