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Si dangling bonds without H termination at the interface of quasi-freestanding monolayer graphene (QFMLG) are known scattering centers that canseverely affect carrier mobility. In this report, we study the atomic andelectronic structure of Si dangling bonds in QFMLG using low-temperaturescanning tunneling microscopy/spectroscopy (STM/STS), atomic force microscopy(AFM), and density functional theory (DFT) calculations. Two types of defectswith different contrast were observed on a flat terrace by STM and AFM. TheirSTM contrast varies with bias voltage. In STS, they showed characteristic peaksat different energies, 1.1 and 1.4 eV. Comparison with DFT calculationsindicates that they correspond to clusters of 3 and 4 Si dangling bonds,respectively. The relevance of these results for the optimization of graphenesynthesis is discussed.

Atomic and Electronic Structure of Si Dangling Bonds in Quasi-Free-Standing Monolayer Graphene