English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Producing monolayers and few-layers in high yield with environment-stabilityis still a challenge in hafnium disulphide (HfS2), which is a layeredtwo-dimensional material of group-IV transition metal dichalcogenides, toreveal its unlocked electronic and optoelectronic applications. For the firsttime, to the best of our knowledge, we demonstrate a simple and cost-effectivemethod to grow layered belt-like nano-crystals of HfS2 with surprisingly largeinterlayer spacing followed by its chemical exfoliation. Various microscopicand spectroscopic techniques reveal these as-grown crystals exfoliate intosingle or few layers in some minutes using solvent assisted ultrasonificationmethod in N-Cyclohexyl-2-pyrrolidone. The exfoliated nanosheets of HfS2 exhibitan indirect bandgap of 1.3 eV with high stability against ambient degradation.Further, we demonstrate that these nanosheets holds potential for electronicapplications by fabricating field-effect transistors based on few layered HfS2exhibiting field-effect mobility of 0.95 cm2/V-s with a high current modulationratio (Ion/Ioff) of 10^4 in ambient. The method is scalable and has potentialsignificance for both academy and industry.

High yield synthesis and liquid exfoliation of two-dimensional belt like hafnium disulphide