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After growing successfully TaP single crystal, we measured its longitudinalresistivity (rhoxx) and Hall resistivity (rhoyx) at magnetic fields up to 9T inthe temperature range of 2-300K. It was found that at 2K its magnetoresistivity(MR) reaches to 328000 percent, at 300K to 176 percent at 8T, and both do notappear saturation. We confirmed that TaP is indeed a low carrier concentration,hole-electron compensated semimetal, with a high mobility of hole muh=371000cm2V-1s-1, and found that a magnetic-field-induced metal-insulator transitionoccurs at room temperature. Remarkably, as a magnetic field (H) is applied inparallel to the electric field (E), the negative MR due to chiral anomaly isobserved, and reaches to -3000 percent at 9T without any signature ofsaturation, too, which distinguishes with other Weyl semimetals (WSMs). Theanalysis on the Shubnikov-de Haas (SdH) oscillations superimposing on the MRreveals that a nontrivial Berry phase with strong offset of 0.3958 realizes inTaP, which is the characteristic feature of the charge carriers enclosing aWeyl nodes. These results indicate that TaP is a promising candidate not onlyfor revealing fundamental physics of the WSM state but also for some novelapplications.

Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP