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We describe the optical characterisation of two silicon cold-electronbolometers each consisting of a small ($32 \times 14~\mathrm{\mu m}$) island ofdegenerately doped silicon with superconducting aluminium contacts. Radiationis coupled into the silicon absorber with a twin-slot antenna designed tocouple to 160-GHz radiation through a silicon lens.The first device has ahighly doped silicon absorber, the second has a highly doped strained-siliconabsorber.Using a novel method of cross-correlating the outputs from twoparallel amplifiers, we measure noise-equivalent powers of $3.0 \times10^{-16}$ and $6.6 \times 10^{-17}~\mathrm{W\,Hz^{-1/2}}$ for the control andstrained device, respectively, when observing radiation from a 77-K source. Inthe case of the strained device, the noise-equivalent power is limited by thephoton noise.

Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers