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In a recent publication [Phys. Rev. Lett. 97, 227402 (2006),cond-mat/0611411], it has been demonstrated numerically that a long-rangedisorder potential in semiconductor quantum wells can be reconstructed reliablyvia single-photon interferometry of spontaneously emitted light.  In the present paper, a simplified analytical model of independent two-levelsystems is presented in order to study the reconstruction procedure in moredetail. With the help of this model, the measured photon correlations can becalculated analytically and the influence of parameters such as the disorderlength scale, the wavelength of the used light, or the spotsize can beinvestigated systematically. Furthermore, the relation between the proposedangle-resolved single-photon correlations and the disorder potential can beunderstood and the measured signal is expected to be closely related to thecharacteristic strength and length scale of the disorder.

Analytical Analysis of Single-Photon Correlations Emitted by Disordered Semiconductor Heterostructures