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As applied to the numerical simulation of electron transport and scatteringprocesses in semiconductors an efficient model describing the scattering ofelectrons by the ionized impurities is proposed. On the example of GaAs at 77and 300 K and Si at 300 K the dependencies of low-field electron mobility onthe donor impurity concentration in the semiconductors are calculated in theframework of proposed model as well as in the framework of such most frequentlyused applied models as the Conwel-Weisskopf model and the Brooks-Herring one.After comparing the calculation results with the well-known experimental datait has been ascertained that the best agreement between the theory andexperiment is achieved with application of the proposed model.

Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion