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To achieve the low noise and wide bandwidth required for millimeterwavelength astronomy applications, superconductor-insulator-superconductor(SIS) mixer based receiver systems have typically been used. This paperinvestigates the performance of high electron mobility transistor (HEMT) basedlow noise amplifiers (LNAs) as an alternative approach for systems operating inthe 125 - 211 GHz frequency range. A four-stage, common-source, unconditionallystable monolithic microwave integrated circuit (MMIC) design is presented usingthe state-of-the-art 35 nm indium phosphide HEMT process from Northrop GrummanCorporation. The simulated MMIC achieves noise temperature (Te) lower than 58 Kacross the operational bandwidth, with average Te of 38.8 K (corresponding toless than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmissionof 20.5 +/- 0.85 dB. Input and output reflection coefficients are better than-6 and -12 dB, respectively, across the desired bandwidth. To the authorsknowledge, no LNA currently operates across the entirety of this frequencyrange. Successful fabrication and implementation of this LNA would challengethe dominance SIS mixers have on sub-THz receivers.

125-211 GHz Low Noise MMIC Amplifier Design for Radio Astronomy