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The conditions whereby epitaxy is achieved are commonly believed to be mostlygoverned by misfit strain. We report on a systematic investigation of growthand interface structure of single crystalline tungsten thin films on twodifferent metal oxide substrates, Al$_{2}$O$_{3}$ ($11\bar{2}0$) and MgO($001$). We demonstrate that despite a significant mismatch, enhanced crystalquality is observed for tungsten grown on the sapphire substrates. This ispromoted by stronger adhesion and chemical bonding with sapphire compared tomagnesium oxide, along with the restructuring of the tungsten layers close tothe interface. The latter is supported by ab initio calculations using densityfunctional theory. Finally, we demonstrate the growth of magneticheterostructures consisting of high-quality tungsten layers in combination withferromagnetic CoFe layers, which are relevant for spintronic applications.

Epitaxy enhancement in oxide/tungsten heterostructures by harnessing the interface adhesion