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The magnetic and electrical transport properties of Mn-doped amorphoussilicon (\textit{a-}Mn$_{x}$Si$_{1-x}$) thin films have been measured. Themagnetic susceptibility obeys the Curie-Weiss law for a wide range of $x$(0.005-0.175) and the saturation moment is small. While all Mn atoms contributeto the electrical transport, only a small fraction (interstitial Mn$^{2+}$states with $J$=$S$=5/2) contribute to the magnetization. The majority of theMn atoms do not possess any magnetic moment, contrary to what is predicted bythe Ludwig-Woodbury model for Mn in crystalline silicon. Unlike\textit{a-}Gd$_{x}$Si$_{1-x}$ films which have an enormous \textit{negative}magnetoresistance, \textit{a-}Mn$_{x}$Si$_{1-x}$ films have only a small\textit{positive} magnetoresistance, which can be understood by this quenchingof the Mn moment.

Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition